Field-effect transistor

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21VOLUME 93, N UMBER 8  PHYSICA L R EVIEW LET T ERS week ending 20 AUGUST 2004

VOLUME 93, N UMBER 8 PHYSICA L R EVIEW LET T ERS week ending 20 AUGUST 2004

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Source URL: rogers.matse.illinois.edu

Language: English - Date: 2004-09-14 20:39:00
22NOM NOM FX Type: Filter  2015 edition  Based on the MXR Phase 90™  © 2015 madbeanpedals  Download the previous version documentation here: 

NOM NOM FX Type: Filter  2015 edition  Based on the MXR Phase 90™  © 2015 madbeanpedals  Download the previous version documentation here: 

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Source URL: madbeanpedals.com

Language: English - Date: 2015-01-06 05:04:57
23REPORT Report on participation of the ICMR International Fellow (ICMR-IF) in Training/Research abroad 1. Name and designation of ICMR-IF: Dr. Rajesh 2. Address: CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road,

REPORT Report on participation of the ICMR International Fellow (ICMR-IF) in Training/Research abroad 1. Name and designation of ICMR-IF: Dr. Rajesh 2. Address: CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road,

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Source URL: www.icmr.nic.in

Language: English - Date: 2016-02-15 06:28:42
24TPD3215M  PRODUCT SUMMARY (TYPICAL) VDS (V)  600

TPD3215M PRODUCT SUMMARY (TYPICAL) VDS (V) 600

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Source URL: www.transphormusa.com

Language: English - Date: 2016-08-11 14:27:45
25158  IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 53, NO. 1, JANUARY 2006 A Charge-Modulated FET for Detection of Biomolecular Processes: Conception,

158 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 53, NO. 1, JANUARY 2006 A Charge-Modulated FET for Detection of Biomolecular Processes: Conception,

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Source URL: www.diee.unica.it

Language: English - Date: 2009-07-13 07:56:50
26Articles published week of 2 NOVEMBERVolume 95 Number 18 APPLI E D PHYS ICS

Articles published week of 2 NOVEMBERVolume 95 Number 18 APPLI E D PHYS ICS

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Source URL: rogers.matse.illinois.edu

Language: English - Date: 2009-11-09 07:08:38
27ANApplication Note Designing Hard-switched Bridges with GaN 1. Diode-free bridges. GaN power HEMTs are nearly ideal switches for many applications. A particular advantage in

ANApplication Note Designing Hard-switched Bridges with GaN 1. Diode-free bridges. GaN power HEMTs are nearly ideal switches for many applications. A particular advantage in

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Source URL: www.transphormusa.com

Language: English - Date: 2016-08-11 14:26:01
28

PDF Document

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Source URL: f1duj.free.fr

Language: English - Date: 2005-04-28 17:39:27
29AOT416 100V N-Channel MOSFET SDMOS TM General Description  Product Summary

AOT416 100V N-Channel MOSFET SDMOS TM General Description Product Summary

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Source URL: img.cecport.com

Language: English - Date: 2015-04-16 21:59:16
30TPH3212PS  PRODUCT SUMMARY (TYPICAL) VDS (V)  650

TPH3212PS PRODUCT SUMMARY (TYPICAL) VDS (V) 650

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Source URL: www.transphormusa.com

Language: English - Date: 2016-08-11 14:28:16